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ヤマガミ ヒロシ
YAMAGAMI HIROSHI
山上 浩志 所属 京都産業大学 理学部 物理科学科 職種 教授 |
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| 言語種別 | 英語 |
| 発行・発表の年月 | 2016/10 |
| 形態種別 | 研究論文 |
| 査読 | 査読あり |
| 標題 | Fermi Surface of ThRu2Si2 as a Reference to the Strongly Correlated Isostructural Metals Investigated by Quantum Oscillations |
| 執筆形態 | その他 |
| 掲載誌名 | JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN |
| 出版社・発行元 | PHYSICAL SOC JAPAN |
| 巻・号・頁 | 85(10),pp.104709 |
| 担当区分 | 責任著者 |
| 著者・共著者 | Yuji Matsumoto,Yoshinori Haga,Naoyuki Tateiwa,Haruyoshi Aoki,Noriaki Kimura,Tomoo Yamamura,Etsuji Yamamoto,Tatsuma D. Matsuda,Zachary Fisk,Hiroshi Yamagami |
| 概要 | We have successfully grown a high-quality single crystal of ThRu2Si2 with the residual resistivity ratio (RRR) of 120, which is a reference compound to the heavy-fermion systems CeRu2Si2 and URu2Si2 crystallizing in the tetragonal ThCr2Si2-type structure, and observed the quantum oscillations (de Haas-van Alphen effect). The result is compared with the Fermi surfaces of CeRu2Si2 and URu2Si2 as well as the band structure calculations. The main features of Fermi surface topology of ThRu2Si2 are similar to those of the heavy-fermion compound CeRu2Si2, indicating that the 4 f electron in CeRu2Si2 contributes to the conduction band. On the other hand, the Fermi surfaces of ThRu2Si2 significantly differ from those obtained for URu2Si2, suggesting the itinerant nature of 5 f electrons rather than the conventionally assumed localized 5 f(2) configuration. |
| DOI | 10.7566/JPSJ.85.104709 |
| ISSN | 0031-9015 |