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セガワ コウジ
SEGAWA KOJI
瀬川 耕司 所属 京都産業大学 理学部 物理科学科 職種 教授 |
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| 言語種別 | 英語 |
| 発行・発表の年月 | 2010/07 |
| 形態種別 | 研究論文 |
| 査読 | 査読あり |
| 標題 | Chemical potential jump between the hole-doped and electron-doped sides of ambipolar high-T-c cuprate superconductors |
| 執筆形態 | その他 |
| 掲載誌名 | PHYSICAL REVIEW B |
| 出版社・発行元 | AMER PHYSICAL SOC |
| 巻・号・頁 | 82(2) |
| 著者・共著者 | M. Ikeda,M. Takizawa,T. Yoshida,A. Fujimori,Kouji Segawa,Yoichi Ando |
| 概要 | In order to study an intrinsic chemical potential jump between the hole-doped and electron-doped high-T-c superconductors, we have performed core-level x-ray photoemission spectroscopy measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La2-xSrxCuO4 and the electron-doped system Nd2-xCexCuO4, we have estimated the true chemical potential jump between the hole-doped and electron-doped YLBLCO to be similar to 0.8 eV, which is much smaller than the optical gaps of 1.4-1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers. |
| DOI | 10.1103/PhysRevB.82.020503 |
| ISSN | 2469-9950/2469-9969 |