セガワ コウジ
SEGAWA KOJI
瀬川 耕司 所属 京都産業大学 理学部 物理科学科 職種 教授 |
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言語種別 | 英語 |
発行・発表の年月 | 2010/07/09 |
形態種別 | 研究論文 |
標題 | Chemical potential jump between the hole-doped and electron-doped sides of ambipolar high- Tc cuprate superconductors |
執筆形態 | その他 |
掲載誌名 | Physical Review B - Condensed Matter and Materials Physics |
巻・号・頁 | 82(2) |
著者・共著者 | M. Ikeda,M. Takizawa,T. Yoshida,A. Fujimori,Kouji Segawa,Yoichi Ando |
概要 | In order to study an intrinsic chemical potential jump between the hole-doped and electron-doped high- Tc superconductors, we have performed core-level x-ray photoemission spectroscopy measurements of Y 0.38La0.62Ba1.74La0.26Cu 3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La2-xSrx CuO4 and the electron-doped system Nd2-xCexCuO4, we have estimated the true chemical potential jump between the hole-doped and electron-doped YLBLCO to be ∼0.8 eV, which is much smaller than the optical gaps of 1.4-1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers. © 2010 The American Physical Society. |
DOI | 10.1103/PhysRevB.82.020503 |
ISSN | 1098-0121 |
PermalinkURL | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77956540519&origin=inward |