|
セガワ コウジ
SEGAWA KOJI
瀬川 耕司 所属 京都産業大学 理学部 物理科学科 職種 教授 |
|
| 言語種別 | 英語 |
| 発行・発表の年月 | 2012/08 |
| 形態種別 | 研究論文 |
| 標題 | Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films |
| 執筆形態 | その他 |
| 掲載誌名 | PHYSICAL REVIEW LETTERS |
| 出版社・発行元 | AMER PHYSICAL SOC |
| 巻・号・頁 | 109(6) |
| 著者・共著者 | A. A. Taskin,Satoshi Sasaki,Kouji Segawa,Yoichi Ando |
| 概要 | The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the three-dimensionality is lost. By measuring the Shubnikov-de Haas oscillations in a series of high-quality Bi2Se3 thin films, we revealed a systematic evolution of the surface conductance as a function of thickness and found a striking manifestation of the topological protection: The metallic surface transport abruptly diminishes below the critical thickness of similar to 6 nm, at which an energy gap opens in the surface state and the Dirac fermions become massive. At the same time, the weak antilocalization behavior is found to weaken in the gapped phase due to the loss of pi Berry phase. |
| DOI | 10.1103/PhysRevLett.109.066803 |
| ISSN | 0031-9007 |
| PermalinkURL | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84864879247&origin=inward |