セガワ コウジ   SEGAWA KOJI
  瀬川 耕司
   所属   京都産業大学  理学部 物理科学科
   職種   教授
言語種別 英語
発行・発表の年月 2016/04
形態種別 研究論文
標題 Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1-xSbxTe2 studied by angle-resolved photoemission
執筆形態 その他
掲載誌名 PHYSICAL REVIEW B
出版社・発行元 AMER PHYSICAL SOC
巻・号・頁 93(16)
著者・共著者 Chi Xuan Trang,Zhiwei Wang,Keiko Yamada,Seigo Souma,Takafumi Sato,Takashi Takahashi,Kouji Segawa,Yoichi Ando
概要 We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1-xSbxTe2 which is bulk insulating at 0.5 less than or similar to x less than or similar to 0.9 and undergoes a metal-insulator-metal transition with the Sb content x. We found that this transition is characterized by a systematic hole doping with increasing x, which results in the Fermi-level crossings of the bulk conduction and valence bands at x similar to 0 and x similar to 1, respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1-xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.
DOI 10.1103/PhysRevB.93.165123
ISSN 2469-9950/2469-9969
PermalinkURL https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84964440188&origin=inward