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ヤマガミ ヒロシ
YAMAGAMI HIROSHI
山上 浩志 所属 京都産業大学 理学部 物理科学科 職種 教授 |
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| 言語種別 | 英語 |
| 発行・発表の年月 | 2009/05 |
| 形態種別 | 研究論文 |
| 査読 | 査読あり |
| 標題 | Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In2-xVxO3 |
| 執筆形態 | その他 |
| 掲載誌名 | PHYSICAL REVIEW B |
| 出版社・発行元 | AMER PHYSICAL SOC |
| 巻・号・頁 | 79(20) |
| 著者・共著者 | M. Kobayashi,Y. Ishida,J. I. Hwang,G. S. Song,M. Takizawa,A. Fujimori,Y. Takeda,T. Ohkochi,T. Okane,Y. Saitoh,H. Yamagami,Amita Gupta,H. T. Cao,K. V. Rao |
| 概要 | The electronic structure of In2-xVxO3 (x=0.08) has been investigated by photoemission spectroscopy and x-ray absorption spectroscopy (XAS). The V 2p core-level photoemission and XAS spectra revealed that the V ion is in the trivalent state, which is the same valence state as that of In in In2O3. The V 3d partial density of states obtained by the resonant photoemission technique showed a sharp peak above the O 2p band. While the O 1s XAS spectrum of In2-xVxO3 was similar to that of In2O3, there were differences in the In 3p and 3d XAS spectra between the V-doped and pure In2O3. The observations give clear evidence for hybridization between the In-derived conduction band and the V 3d orbitals in In2-xVxO3. |
| DOI | 10.1103/PhysRevB.79.205203 |
| ISSN | 1098-0121 |