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ヤマガミ ヒロシ
YAMAGAMI HIROSHI
山上 浩志 所属 京都産業大学 理学部 物理科学科 職種 教授 |
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| 言語種別 | 英語 |
| 発行・発表の年月 | 2009/08/15 |
| 形態種別 | 研究論文 |
| 査読 | 査読あり |
| 標題 | Observation of Itinerant Ce 4f Electronic States in CeIrSi3 Studied by Angle-Resolved Ce 3d -> 4f Resonance Photoemission Spectroscopy |
| 執筆形態 | その他 |
| 掲載誌名 | JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN |
| 出版社・発行元 | PHYSICAL SOC JAPAN |
| 巻・号・頁 | 78(8),pp.084802-084802 |
| 担当区分 | 責任著者 |
| 著者・共著者 | Takuo Ohkochi,Takafumi Toshimitsu,Hiroshi Yamagami,Shin-ichi Fujimori,Akira Yasui,Yukiharu Takeda,Tetsuo Okane,Yuji Saitoh,Atsushi Fujimori,Yuichiro Miyauchi,Yusuke Okuda,Rikio Settai,Yoshichika Onuki |
| 概要 | We have applied angle-resolved Cc 3d -> 4f resonance photoemission spectroscopy (h nu similar to 882 eV) in the soft X-ray region to the analysis of the non-centrosymmetric pressure-induced superconductor CeIrSi3 and obtained the 4f band structure and Fermi surfaces. We have found that the Ce 4f states are located mainly near the Fermi level and that the photoemission feature corresponding to the dispersive conduction bands across the Fermi level shows considerable resonant enhancement. In addition, the band structure and Fermi surfaces of CeIrSi3 differ from those of the non-f reference compound LaIrSi3, and the differences are well explained by the band structure calculated within local density approximation, in which the Ce 4f states are assumed to be itinerant. These results strongly suggest that the Ce 4f electrons in CeIrSi3 hybridized well with conduction bands and form itinerant electronic states. |
| DOI | 10.1143/JPSJ.78.084802 |
| ISSN | 0031-9015/1347-4073 |
| PermalinkURL | https://journals.jps.jp/doi/pdf/10.1143/JPSJ.78.084802 |