セガワ コウジ
SEGAWA KOJI
瀬川 耕司 所属 京都産業大学 理学部 物理科学科 職種 教授 |
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言語種別 | 英語 |
発行・発表の年月 | 2018/01 |
形態種別 | 研究論文 |
査読 | 査読あり |
標題 | Topological interface states in the natural heterostructure (PbSe) 5 (Bi2Se3) 6 with BiPb defects |
執筆形態 | その他 |
掲載誌名 | Physical Review B |
掲載区分 | 国外 |
出版社・発行元 | American Physical Society |
巻・号・頁 | 97(3) |
著者・共著者 | Hiroyoshi Momida,Gustav Bihlmayer,Stefan Blügel,Kouji Segawa,Yoichi Ando,Tamio Oguchi |
概要 | We study theoretically the electronic band structure of (PbSe)5(Bi2Se3)6, which consists of an ordinary insulator PbSe and a topological insulator Bi2Se3. The first-principles calculations show that this material has a gapped Dirac-cone energy dispersion inside the bulk, which originates from the topological states of Bi2Se3 layers encapsulated by PbSe layers. Furthermore, we calculate the band structures of (BixPb1-xSe)5(Bi2Se3)6 with BiPb antisite defects included in the PbSe layers. The result shows that a high density of BiPb defects can exist in real materials, consistent with the experimentally estimated x of more than 30%. The BiPb defects strongly modify the band alignment between Bi2Se3 and PbSe layers, while the topological interface states of Bi2Se3 are kept as a gapped Dirac-cone-like dispersion. |
DOI | 10.1103/PhysRevB.97.035113 |
ISSN | 2469-9969 |
PermalinkURL | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040351377&origin=inward |