セガワ コウジ   SEGAWA KOJI
  瀬川 耕司
   所属   京都産業大学  理学部 物理科学科
   職種   教授
言語種別 英語
発行・発表の年月 2018/01
形態種別 研究論文
査読 査読あり
標題 Topological interface states in the natural heterostructure (PbSe) 5 (Bi2Se3) 6 with BiPb defects
執筆形態 その他
掲載誌名 Physical Review B
掲載区分国外
出版社・発行元 American Physical Society
巻・号・頁 97(3)
著者・共著者 Hiroyoshi Momida,Gustav Bihlmayer,Stefan Blügel,Kouji Segawa,Yoichi Ando,Tamio Oguchi
概要 We study theoretically the electronic band structure of (PbSe)5(Bi2Se3)6, which consists of an ordinary insulator PbSe and a topological insulator Bi2Se3. The first-principles calculations show that this material has a gapped Dirac-cone energy dispersion inside the bulk, which originates from the topological states of Bi2Se3 layers encapsulated by PbSe layers. Furthermore, we calculate the band structures of (BixPb1-xSe)5(Bi2Se3)6 with BiPb antisite defects included in the PbSe layers. The result shows that a high density of BiPb defects can exist in real materials, consistent with the experimentally estimated x of more than 30%. The BiPb defects strongly modify the band alignment between Bi2Se3 and PbSe layers, while the topological interface states of Bi2Se3 are kept as a gapped Dirac-cone-like dispersion.
DOI 10.1103/PhysRevB.97.035113
ISSN 2469-9969
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