|
セガワ コウジ
SEGAWA KOJI
瀬川 耕司 所属 京都産業大学 理学部 物理科学科 職種 教授 |
|
| 言語種別 | 英語 |
| 発行・発表の年月 | 2014/03 |
| 形態種別 | 研究論文 |
| 査読 | 査読あり |
| 標題 | Topological surface transport in epitaxial SnTe thin films grown on Bi2Te3 |
| 執筆形態 | その他 |
| 掲載誌名 | PHYSICAL REVIEW B |
| 掲載区分 | 国外 |
| 出版社・発行元 | AMER PHYSICAL SOC |
| 巻・号・頁 | 89(12) |
| 著者・共著者 | A. A. Taskin,Fan Yang,Satoshi Sasaki,Kouji Segawa,Yoichi Ando |
| 概要 | The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov-de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin. |
| DOI | 10.1103/PhysRevB.89.121302 |
| ISSN | 1098-0121 |
| PermalinkURL | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84896927619&origin=inward |