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セガワ コウジ
SEGAWA KOJI
瀬川 耕司 所属 京都産業大学 理学部 物理科学科 職種 教授 |
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| 言語種別 | 英語 |
| 発行・発表の年月 | 2014/04 |
| 形態種別 | 研究論文 |
| 査読 | 査読あり |
| 標題 | Top gating of epitaxial (Bi1-xSbx)(2)Te-3 topological insulator thin films |
| 執筆形態 | その他 |
| 掲載誌名 | APPLIED PHYSICS LETTERS |
| 掲載区分 | 国外 |
| 出版社・発行元 | AMER INST PHYSICS |
| 巻・号・頁 | 104(16) |
| 著者・共著者 | Fan Yang,A. A. Taskin,Satoshi Sasaki,Kouji Segawa,Yasuhide Ohno,Kazuhiko Matsumoto,Yoichi Ando |
| 概要 | The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here, we report a method to fabricate highly efficient top gates on epitaxially grown (Bi1-xSbx)(2)Te-3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 capping layer and a SiNx dielectric layer deposited at low temperature, we were able to protect the films from degradation during the fabrication processes. We demonstrate that by using this top gate, the carriers in the top surface can be efficiently tuned from n- to p-type. We also show that magnetotransport properties give evidence for decoupled transport through top and bottom surfaces for the entire range of gate voltage, which is only possible in truly bulk-insulating samples. (C) 2014 AIP Publishing LLC. |
| DOI | 10.1063/1.4873397 |
| ISSN | 0003-6951 |
| PermalinkURL | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84900300174&origin=inward |