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ヤマガミ ヒロシ
YAMAGAMI HIROSHI
山上 浩志 所属 京都産業大学 理学部 物理科学科 職種 教授 |
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| 言語種別 | 英語 |
| 発行・発表の年月 | 2008/07 |
| 形態種別 | その他 |
| 査読 | 査読あり |
| 標題 | Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy |
| 執筆形態 | その他 |
| 掲載誌名 | Physical Review B |
| 巻・号・頁 | 78(3),pp.033304\_1-033304\_4 |
| 著者・共著者 | Song, G,Kobayashi, Masaki,Hwang, J. I,Kataoka, Takashi,Takizawa, Masaru,Fujimori, Atsushi,Okochi, Takuo,Takeda, Yukiharu,Okane, Tetsuo,Saito, Yuji,Yamagami, Hiroshi,Chang, F.-H,Lee, L,Lin, H.-J,Huang, D.-J,Chen, C. T,Kimura, Shigeya,Funakoshi, Masayuki,Hasegawa, Shigehiko,Asahi, Hajime |
| 概要 | The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N, and the effect of Si doping on it have been investigated by photoemission and soft X-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent when substituting for Ga and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical-potential shift and the formation of a small amount of Cr$^{2+}$ species caused by electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data. |
| DOI | 10.1103/PhysRevB.78.033304 |